Toshiba to introduce 15nm NAND Flash Memories soon

Toshiba Corporation has announced that it will develop the world’s first 15-nanometer (nm)1 process technology, which will apply to 2-bit-per-cell 128-gigabit (16 gigabytes) NAND flash memories. Mass production with the new technology will start at the end of April at Fab 5 Yokkaichi Operations, Toshiba’s NAND flash fabrication facility (fab), replacing second generation 19 nm process technology, Toshiba’s previous flagship process.

The second stage of Fab 5 is currently under construction, and the new technology will be deployed as well. According to official reports, The company aims to start mass production in the first quarter of this fiscal year, to June 2014. The company will develop controllers for embedded NAND flash memory in parallel and introduce 3-bit-per-cell products for smartphones and tablets, and will subsequently extend application to notebook PCs by developing a controller compliant with solid state drives (SSD).